ki ki semiconductor co. document number 0268008 1. features silicon epitaxial planar diode high speed switching diode 500 mw power dissipation weight: 0.004 ounces, 0.13 grams maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. maximum ratings units reverse voltage v r v peak reverse voltage v rm v average f orw ard rectif ied current half w ave rectification w ith resist.load @ t a = 25 and f 50hz forw ard surge current @ t<1s and t j = 25 i fsm a pow er dissipation @ t a =25 p tot mw thermal resistance junction to ambient r ja k/w junction temperature t j storage temperature range t stg electrical characteristics units forw ard voltage @ i f =100ma leakage cu rrent @t j =25 capacitance @ v f =v r =0 v f=1mh z c j pf reverse recovery time from i f =30ma to i r =30ma from i rr =3ma, r l =100 . i r v f v ns 50 - - semiconductor co. t rr -- min typ 250 1) 1.5 i (av) 1.0 500 1) ma - - 1.0 BAV17---bav21 mechanical data small signal switching diodes case: do-35,glass case voltage range: 20-200 v current: 250 ma polarity: color band denotes cathode do - 35(glass) 1)valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. - 15 max - - - BAV17 bav18 bav19 bav20 bav21 20 50 100 150 200 25 60 120 200 250 350 175 -55 --- +175 1)valid provided that leads at a di stance of 8 mm from case are kept at ambient temperature. at reverse voltage @t j =100 100 na ma dimensions in millimeters
0 200 ?? v r =50v 0.1 1 10 100 1000 100 i r (t j ) i r (25 ) t j 0 100 200 ?? 100 1 mw 200 300 400 500 p tot t a 1.8 1.4 .6 1 .2 .1 .2 .5 1 2 100v t j =25 v r 50 20 10 5 0 .4 .8 1.2 1.6 2 c j ki semiconductor co. document number 0268008 2. 100 10 .1 1 .01 0.2.4.6.81.0v t j =25 i f 1000 ma t j =100 v f 5 ma 1 r f i f 10 1 2 10 20 50 100 2 5 20 50 100 0 90 150 ?? .1 1 a dc current i f .3 .2 30 60 120 current (rectif.) i f(av) i o , i f t a BAV17---bav21 fi g. 4 -- leakage current versus juncti on temperature fi g. 5 -- dynami c forward resi stance versus forward current fi g. 6 -- capaci tance versus reverse voltage fi g. 1 -- forward characteristi cs fi g. 2 -- admi ssi ble forward current versus ambi ent temperature fi g. 3 -- admissi ble power di sslpati on versus ambi ent temperature ratings and characteristic curves
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